Part Number : SHDC626822
HERMETIC SILICON CARBIDE FET
DESCRIPTION: A 1200, Min VOLT, 22 AMP POWER SILICON CARBIDE Nch+Dio FET IN AN ISOLATED HERMETIC TO-257 PACKAGE, AVAILABLE SCREENED TO ANY REQUIRED LEVEL.
RATING | SYMBOL | MAX | UNITS |
---|---|---|---|
DRAIN-SOURCE VOLTAGE | VDSS | 1200 | V |
CONTINUOUS DRAIN CURRENT | VGS | 22 | A |
PULSED DRAIN CURRENT (t ≤ 10μs, dc ≤ 1%) | ID pulse | 80 | A |
GATE - SOURCE VOLTAGE | VGSS | 4 | V |
MAXIMUM POWER DISSIPATION, TC = 25°C | Pd | 75 | W |
MAXIMUM THERMAL RESISTANCE | RθJC | 1.67 | °C/W |
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE | Top, Tstg | -55 to 150 | °C |
CHARACTERISTIC | MIN | TYP | MAX | UNITS |
---|---|---|---|---|
GATE THRESHOLD VOLTAGE (VDS = VGS) | -6 to 22 | V | ||
STATIC DRAIN – SOURCE ON - STATE RESISTANCE (@ ID(A)) | 0.125 @ 10 | mΩ | ||
FORWARD VOLTAGE | 1.3V | V |