Part Number : SHD619532
HERMETIC SILICON CARBIDE FET
DESCRIPTION: A 1200, Min VOLT, 23 AMP POWER SILICON CARBIDE Nch FET IN AN ISOLATED HERMETIC SMD-1 PACKAGE, AVAILABLE SCREENED TO ANY REQUIRED LEVEL.
RATING | SYMBOL | MAX | UNITS |
---|---|---|---|
DRAIN-SOURCE VOLTAGE | VDSS | 1200 | V |
CONTINUOUS DRAIN CURRENT | VGS | 23 | A |
PULSED DRAIN CURRENT (t ≤ 10μs, dc ≤ 1%) | ID pulse | 80 | A |
GATE - SOURCE VOLTAGE | VGSS | ? | V |
MAXIMUM POWER DISSIPATION, TC = 25°C | Pd | 150 | W |
MAXIMUM THERMAL RESISTANCE | RθJC | 1 | °C/W |
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE | Top, Tstg | -55 to 150 | °C |
CHARACTERISTIC | MIN | TYP | MAX | UNITS |
---|---|---|---|---|
GATE THRESHOLD VOLTAGE (VDS = VGS) | -10 to 25 | V | ||
STATIC DRAIN – SOURCE ON - STATE RESISTANCE (@ ID(A)) | 0.11 @ 20 | mΩ | ||
FORWARD VOLTAGE | 3.3V | V |